NPN DARLINGTON-TRANSISTOR TIP120G 60 V 8 A HFE:1000, TO-220 3-PIN, TIP120G ONSEMI

Description

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. The ON Semiconductor TIP120G is a medium power NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier and low-speed switching applications. The TIP120G comes in a plastic TO-220AB through-hole package.

• High DC Current Gain

• Low collector-emitter saturation voltage

• Monolithic Construction

• Built-in Base Emitter Shunt Resistor

• Compact package

• NPN Polarity

Specificiations

• Attribute:Value
• Transistor Type:NPN
• Maximum Continuous Collector Current:8 A
• Maximum Collector Emitter Voltage:60 V
• Maximum Emitter Base Voltage:5 V
• Package Type:TO-220
• Mounting Type:Through Hole
• Pin Count:3
• Transistor Configuration:Single
• Number of Elements per Chip:1
• Minimum DC Current Gain:1000
• Maximum Collector Base Voltage:60 V
• Maximum Collector Emitter Saturation Voltage:4 V
• Maximum Collector Cut-off Current:0.5mA
• Maximum Power Dissipation:65 W
• Dimensions:15.75 x 10.28 x 4.82mm
• Maximum Operating Temperature:+150 °C
• Minimum Operating Temperature:-65 °C
• Length:15.75mm
• Width:10.28mm
• Height:4.82mm

Datasheet: TIP120G_ONSEMI